宋愛民，男，1989年畢業(yè)于山東大學(xué)物理系，1995年從中科院半導(dǎo)體所取得博士學(xué)位后赴英國格拉斯哥大學(xué)、德國慕尼黑大學(xué)和瑞典隆德大學(xué)作皇家學(xué)會(huì)博士后、洪堡基金訪問學(xué)者、客座講師。2002年在曼徹斯特大學(xué)任講師， 2006年被破格晉升為正教授。2011年作為特聘教授籌建山東大學(xué)納電子工程研究中心，并任中心主任。2006年獲得英國皇家學(xué)會(huì)Brian Mercer Feasibility Award獎(jiǎng)，2007年獲得曼徹斯特大學(xué)第二屆“年度科學(xué)家”杰出成就獎(jiǎng)?wù)?。迄今發(fā)表了包括Nature Communications，Physical Review Letters, PNAS, NanoLetters等近200余篇學(xué)術(shù)期刊論文，擁有三十多項(xiàng)國際國內(nèi)專利，作為負(fù)責(zé)人主持了30多項(xiàng)科研項(xiàng)目，其中兩項(xiàng)歐共體框架項(xiàng)目以他發(fā)明的電子器件為核心開展研究。曾在80多個(gè)國際國內(nèi)會(huì)議上做特邀報(bào)告，是英國IET Fellow、美國IEEE高級(jí)會(huì)員。
本網(wǎng)站陳心正老師和宋愛民教授是同學(xué)，有想購買宋教授專利，或者想合作辦廠的，可以與本網(wǎng)站聯(lián)系（微信號(hào)xinzheng8181）。
【教育經(jīng)歷】
1985.9-1989.6    本科   山東大學(xué)物理系，濟(jì)南
1989.9-1992.6    碩士   中科院半導(dǎo)體所，北京
1992.9-1995.2    博士   中科院半導(dǎo)體所，北京
納米電子器件/寬禁帶半導(dǎo)體材料與器件/二維材料與器件
通信地址：山東大學(xué)中心校區(qū)知新樓C805
郵政編碼：250100
聯(lián)系電話：0531-88362221
電子郵箱：songam@sdu.edu.c
? Peer reviewed journal articles since 2015:
1. Charge-trapping memory based on tri-layer alumina gate stack and InGaZnO channel, Ma, P., Gao, J., Guo, W., Zhang, G., Whang, Y., Xin, Q., Li, Y. & Song, A., Semiconductor Science and Technology, (2020) In press.
2. Significant Performance Enhancement of Very Thin InGaZnO Thin-Film Transistors by a Self-Assembled Monolayer Treatment, Wensi Cai, Joshua Wilson, Jiawei Zhang, Joseph Brownless, Xijian Zhang, Leszek Artur Majewski, Aimin Song, ACS Appl. Electron. Mater. 2 (1) 301-308 (2020) DOI: 10.1021/acsaelm.9b00791
3. Electron transport mechanism through ultrathin Al2O3 films grown at low temperatures using atomic–layer deposition, Pengfei Ma, Wenhao Guo, Jiamin Sun, Jiacheng Gao, Guanqun Zhang, Qian Xin, Yuxiang Li and Aimin Song, Extremely-High-Gain Source-Gated Transistors, Semicond. Sci. Technol. 2019, 34, 105004.
4. Low-Frequency Noise in Electric Double Layer InGaZnO Thin-Film Transistors Gated with Sputtered SiO2-Based Electrolyte, Xiaochen Ma, Jiawei Zhang, Wensi Cai, Joshua Wilson, Aimin Song, ACS Appl. Electron. Mater. 2019, 1(6), 972-976.
5. Achieving high performance Ga2O3 diodes by adjusting chemical composition of tin oxide Schottky electrode, Lulu Du, Qian Xin, Mingsheng Xu, Yaxuan Liu, Guangda Liang, Wenxiang Mu, Zhitai Jia, Xinyu Wang, Gongming Xin, Xu-Tang Tao and Aimin Song, Semicond. Sci. Technol. 2019, 34, 075001.
6. Metal-insulator-metal diodes based on alkyltrichlorosilane self-assembled monolayers, Jidong Jin, Lei Wang, Zhaoliang Zheng, Jiawei Zhang, Xuzhi Hu, Jian R. Lu, David Etor, Chris Pearson, Aimin Song, David Wood, Andrew J. Gallant, and Claudio Balocco, AIP Advances 2019, 9(6), 065017.
7. Non-covalent functionalisation of graphene towards the detection of pathogen DNA, Monteil, S, Song, A, Yeates, S, Quayle, P, Casson, A & Jones, S 2019, 2D materials - student conference series, Bedfordshire, United Kingdom, 1/07/19 - 4/07/19.
8. High-Performance InGaZnO-Based ReRAMs, Pengfei Ma, Guangda Liang, Yiming Wang, Yunpeng Li, Qian Xin, Yuxiang Liu, Aimin Song, IEEE Trans Electron Dev. 2019, 66(6), 2600-2605.
9. Analytical Theory of Thin-Film Schottky Diodes, Joshua Wilson, Jiawei Zhang, Aimin Song, ACS Appl. Electron. Mater. 2019, 1(8), 1570-1580.
10. Complementary Integrated Circuits Based on n-Type and p-Type Oxide Semiconductors for Applications Beyond Flat-Panel Displays, Yunpeng Li, Jiawei Zhang, Jin Yang, Yvzhuo Yuan, Zhenjia Hu, Zhaojun Lin, Aimin Song and Qian Xin, IEEE Trans Electron Dev. 2019, 66(2), 950-956.
11. Extremely-High-Gain Source-Gated Transistors, Jiawei Zhang, Joshua Wilson, Gregory Auton, Yiming Wang, Mingsheng Xu, Qian Xin, and Aimin Song, PNAS (Proceedings of the National Academy of Sciences) 116 (11) 4843-4848 (2019); DOI: 10.1073/pnas.1820756116
12. Graphene bridge rectifier based on self-switching diode arrays, Jiawei Zhang, Joseph Brownless, and Aimin Song, Nanotechnology 2019, 30, 364004.
13. High-Performance Ga2O3 Diode Based on Tin Oxide Schottky Contact, Lulu Du, Qian Xin, Mingsheng Xu, Yaxuan Liu, Wenxiang Mu, Shiqi Yan, Xinyu Wang, Gongming Xin, Zhitai Jia, Xu-Tang Tao, Aimin Song, IEEE Electron Device Letters. 40 (3), 451-454 (2019)
14. Low–temperature fabrication of HfAlO alloy dielectric using atomic–layer deposition and its application in a low–power device, Pengfei Ma, Jiamin Sun, Guanqun Zhang, Guangda Liang, Qian Xin, Yuxiang Li, Aimin Song, Journal of Alloys and Compounds 2019, 792, 543e549.
15. Low-Voltage, Flexible InGaZnO Thin-Film Transistors Gated with Solution-Processed, Ultra-Thin AlxOy, Wensi Cai, Joshua Wilson, Jiawei Zhang, Seonghyun Park, Leszek Majewski, Aimin Song, Low-Voltage, IEEE Electron Device Letters Vol. 40, 36-39 (2019) DOI: 10.1109/LED.2018.2882464
16. Low-Voltage, Full-Swing InGaZnO-Based Inverters Enabled by Solution-Processed, Ultra-Thin AlxOy, Wensi Cai, Jiawei Zhang, Joshua Wilson, Aimin Song, IEEE Electron Dev Lett. 2019, 40(8), 1285-1288.
17. Oxide devices for displays and low power electronics, Jiawei Zhang  Wensi Cai  Joshua Wilson  Xiaochen Ma  Joseph Brownless  Yunpeng Li  Jin Yang  Yuzhuo Yuan  Pengfei Ma  Qian Xin  Aimin Song, SID Symposium Digest of Technical Papers, International Conference on Display Technology (ICDT 2019), September 2019, Volume 50, Issue S1, Pages 81-84.
18. Reactive evaporation of SiOx films for passivation of GaN high-electron-mobility transistors, Gengchang Zhu, Guangda Liang, Yang Zhou, Xiufang Chen, Xiangang Xu, Xianjin Feng, Aimin Song, Journal of Physics and Chemistry of Solids Vol. 129, 54-60 (2019)
19. Schottky-barrier thin-film transistors based on HfO2-capped InSe, Yiming Wang, Jiawei Zhang,  Guangda Liang, Yanpeng Shi, Yifei Zhang, Zakhar R. Kudrynskyi, Zakhar D. Kovalyuk, Amalia Patanè,  Qian Xin, and  Aimin Song, Appl. Phys. Lett. 2019, 115(3), 033502.
20. Solution-Processed HfOx for Half-Volt Operation of InGaZnO Thin-Film Transistors, Wensi Cai, Joseph Brownless, Jiawei Zhang, Hu Li, Evan Tillotson, David G. Hopkinson, Sarah J. Haigh, Aimin Song, ACS Appl. Electron. Mater. 2019, 1(8), 1581-1589.
21. Solution-Processed TiO2-Based Schottky Diodes With a Large Barrier Height, Xijian Zhang, Wensi Cai, Jiawei Zhang, Joseph Brownless, Joshua Wilson, Yifei Zhang , and Aimin Song, IEEE Electron Dev Lett. 2019, 40(9), 1378-1380.
22. Tunable Surface Plasmon Polaritons with Monolithic Schottky Diodes, Yifei Zhang, Haotian Ling, Pingjian Chen, Pengfei Qian, Yanpeng Shi, Yiming Wang, Huayu Feng, Qian Xin, Qingpu Wang, Shouyuan Shi, Xiaomin Pan, Xinqing Sheng, Aimin Song, ACS Appl. Electron. Mater. 2019, 1(10), 2124-2129.
23. All-oxide-semiconductor-based Thin-film Complementary Static Random Access Memory, Jin Yang, Yuzhuo Yuan, Yunpeng Li, Lulu Du, Yiming Wang, Zhenjia Hu, Qingpu Wang, Li Zhou, Qian Xin, and Aimin Song, IEEE Electron Device Letters. 2018, 39(12), 1876-1879. DOI: 10.1109/LED.2018.2877589
24. A unipolar nano-diode detector with improved performance using the high-k material SiNx, Linqing Zhang, Haiping Zhou, Jiawei Zhang, Qingpu Wang, Yifei Zhang, Aimin Song, Semiconductor Science and Technology. 2018, 33(11), 114016. DOI: 10.1088/1361-6641/aae2f5
25. High-Performance Flexible Schottky Diodes Based on Sputtered InGaZnO, Lulu Du, Jiawei Zhang, Yunpeng Li, Mingsheng Xu, Qingpu Wang, Aimin Song, Qian Xin, IEEE Transactions on Electron Devices. 2018, 65(10), 4326-4333. DOI: 10.1109/TED.2018.2864165
26. Low-Voltage, Flexible IGZO Transistors Gated by PSSNa Electrolyte, Lulu Du, Dandan He, Yaxuan Liu, Mingsheng Xu, Qingpu Wang, Qian Xin, Aimin Song, IEEE Electron Device Letters. 2018, 39(9), 1334-1337. DOI: 10.1109/LED.2018.2862910
27. Two-Terminal InGaAs Microwave Amplifier, Hanbin Wang, Yifei Zhang, Yanpeng Shi, Haotian Ling, Qingpu Wang, Fengqi Liu, Fuhua Yang, Kunyuan Xu, Qian Xin, Aimin Song, Microwave and Optical Technology Letters. 2018, 60(8), 1884-1888. DOI: 10.1002/mop.31261
28. Organic and Inorganic Passivation of p-type SnO Thin-Film Transistors with Different Active Layer Thicknesses, Yunxiu Qu, Jia Yang, Yunpeng Li, Jiawei Zhang, Qingpu Wang, Aimin Song, Qian Xin, Semiconductor Science and Technology. 2018, 33(7), 075001. DOI: 10.1088/1361-6641/aac3c4
29. Estimation of intrinsic and extrinsic capacitances of graphene self-switching diode using conformal mapping technique, Arun Kumar Singh, Gregory Auton, Ernest Hill, Aimin Song, 2D Materials. 2018, 5(3), 035023. DOI: 10.1088/2053-1583/aac133
30. Improved performance of InSe field-effect transistors by channel encapsulation, Guangda Liang, Yiming Wang, Lin Han, Zaixing Yang, Qian Xin, Zakhar Kudrynskyi, Zahar Kovalyuk, Amalia Patane, Aimin Song, Semiconductor Science and Technology. 2018, 33(6), 06LT01. DOI: 10.1088/1361-6641/aab62b
31. Phosphorus-Doped MoS2 Nanosheets Supported on Carbon Cloths as Efficient Hydrogen-Generation Electrocatalysts, Luozhen Bian, Wei Gao, Jiamin Sun, Mingming Han, Fulin Li, Zhaofeng Gao, Lei Shu, Ning Han, Zai-xing Yang, Aimin Song, Yongquan Qu, and Johnny C. Ho, ChemCatChem. 2018, 10(7), 1571-1577. (Cover paper) DOI: 10.1002/cctc.201701680
32. Highly Optimised Complementary Inverters Based on p-SnO and n-InGaZnO with High Uniformity, Jin Yang, Yiming Wang, Yunpeng Li, Yuzhuo Yuan, Zhenjia Hu, Pengfei Ma, Li Zhou, Qingpu Wang, Aimin Song, and Qian Xin, IEEE Electron Device Letters. 2018, 39(4), 516-519. (Editor’s Picks) DOI: 10.1109/LED.2018.2809796
33. Pulsed-laser-deposited, single-crystalline Cu2O films with low resistivity achieved through manipulating the oxygen pressure, Xiaohui Liu, Meng Xu, Xijian Zhang, Weiguang Wang, Xianjin Feng, Aimin Song, Applied Surface Science. 2018, 435, 305-311. DOI: 10.1016/j.apsusc.2017.11.119
34. Amorphous-InGaZnO Thin-Film Transistors Operating Beyond 1 GHz Achieved by Optimizing the Channel and Gate Dimensions, Yiming Wang, Hanbin Wang, Jiawei Zhang, He Li, Gengchang Zhu, Yanpeng Shi, Yuxiang Li, Qingpu Wang, Qian Xin, Zhongchao Fan, Fuhua Yang, and Aimin Song, IEEE Transactions on Electron Devices. 2018, 65(4), 1377-1382. DOI: 10.1109/TED.2018.2807621
35. One-Volt IGZO Thin-Film Transistors With Ultra-Thin, Solution-Processed AlxOy Gate Dielectric, Wensi Cai, Seonghyun Park, Jiawei Zhang, Joshua Wilson, Yunpeng Li , Qian Xin, Leszek Majewski, and Aimin Song, IEEE Electron Device Letters. 2018, 39(3), 375-378. DOI: 10.1109/LED.2018.2798061
36. Complementary Integrated Circuits Based on p-type SnO and n-type IGZO Thin-Film Transistors, Yunpeng Li, Jin Yang, Yiming Wang, Pengfei Ma, Yvzhuo Yuan, Jiawei Zhang, Zhaojun Lin, Li Zhou, Qian Xin, and Aimin Song, IEEE Electron Device Letters. 2018, 39(2), 208-211. DOI: 10.1109/LED.2017.2786237
37. A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density, Jidong Jin, Jiawei Zhang, Andrew Shaw, Valeriya Kudina, Ivona Mitrovic, Jacqueline Wrench, Paul Chalker, Claudio Balocco, Aimin Song, Steve Hall, Journal of Physics D: Applied Physics. 2018, 51(6), 065102.
38. Low voltage operation of IGZO thin film transistors enabled by ultrathin Al2O3 gate dielectric, Pengfei Ma, Lulu Du, Yiming Wang, Ran Jiang, Qian Xin, Yuxiang Li, and Aimin Song, Applied Physics Letters. 2018, 112(2), 023501.
39. Ambipolar SnOx Thin-Film Transistors Achieved at High Sputtering Power, Yunpeng Li, Jia Yang, Yunxiu Qu, Jiawei Zhang, Li Zhou, Zaixing Yang, Zhaojun Lin, Qingpu Wang, Aimin Song, and Qian Xin, Applied Physics Letters. 2018, 112(18), 182102. DOI: 10.1063/1.5022875
40. Chalcogen passivation: an in-situ method to manipulate the morphology and electrical property of GaAs nanowires, Zai-xing Yang, Yanxue Yin, Jiamin Sun, Luozhen Bian, Ning Han, Ziyao Zhou, Lei Shu, Fengyun Wang, Yunfa Chen, Aimin Song, Johnny C Ho, Scientific Reports. 2018, 8(1), 6928. DOI: 10.1038/s41598-018-25209-x
41. Ga2O3 Field-Effect-Transistor-Based Solar-Blind Photodetector With Fast Response and High Photo-to-Dark Current Ratio, Yaxuan Liu, Lulu Du, Guangda Liang, Wenxiang Mu, Zhitai Jia, Mingsheng Xu, Qian Xin, Xutang Tao, Aimin Song, IEEE Electron Device Letters. 2018, 39(11), 1696-1699. DOI: 10.1109/LED.2018.2872017
42. GaN metal-oxide-semiconductor high-electron-mobility transistors using thermally evaporated SiO as the gate dielectric, Gengchang Zhu, Yiming Wang, Qian Xin, Mingsheng Xu, Xiufang Chen, Xiangang Xu, Xianjin Feng, Aimin Song, Semiconductor Science and Technology. 2018, 33(9), 095023. DOI: 10.1088/1361-6641/aad8d7
43. Half-volt operation of IGZO thin-film transistors enabled by ultrathin HfO2 gate dielectric, Pengfei Ma, Jiamin Sun, Guangda Liang, Yunpeng Li, Qian Xin, Yuxiang Li, Aimin Song, Applied Physics Letters, 2018, 113(6), 063501. DOI: 10.1063/1.5037410
44. Oxide-Based Complementary Inverters With High Gain and Nanowatt Power Consumption, Yuzhuo Yuan, Jin Yang, Zhenjia Hu, Yunpeng Li, Lulu Du, Yiming Wang, Li Zhou, Qingpu Wang, Aimin Song, Qian Xin, IEEE Electron Device Letters. 2018, 39(11), 1676-1679. DOI: 10.1109/LED.2018.2871053
45. Two-Step Vapor Deposition of Self-Catalyzed Large-Size PbI2 Nanobelts for High-Performance Photodetectors, Mingming Han,  Jiamin Sun,  Luozhen Bian,  Zhou Wang,  Lei Zhang,  Yanxue Yin,  Zhaofeng Gao,  Fulin Li,  Qian Xin,  Longbing He,  Ning Han,  Aimin Song  and  Zaixing Yang, Journal of Materials Chemistry C. 2018, 6(21), 5746-5753. DOI: 10.1039/C8TC01180J
46. Cu2O epitaxial films with domain structures prepared on Y-stabilized ZrO2 substrates by pulsed laser deposition, Liu, X., Xu, M., Ma, J., Zhang, X., Luan, C., Feng, . X. & Song, A., Ceramics International. 43, 17, p. 15500-15504 (2017).
47. Influence of interface inhomogeneities in thin-film Schottky diodes, Joshua Wilson, Jiawei Zhang, Yunpeng Li,  Yiming Wang,  Qian Xin, and Aimin Song, Applied Physics Letters,  111, 213503 (2017).
48. Terahertz Detection and Imaging Using Graphene Ballistic Rectifiers, Gregory Auton, Dmytro B. But, Jiawei Zhang, Ernie Hill, Dominique Coquillat, Christophe Consejo, Philippe Nouvel, Wojciech Knap, Luca Varani, Frederic Teppe, Jeremie Torres, and Aimin Song, Nano Letters, 17, 7015-7020 (2017). DOI: 10.1021/acs.nanolett.7b03625
49. Oxide-Based Electric-Double-Layer Thin-Film Transistors on a Flexible Substrate, Wensi Cai, Jiawei Zhang , Joshua Wilson, Xiaochen Ma, Hanbin Wang, Xijian Zhang, Qian Xin, and Aimin Song, IEEE Electron Device Letters, 38, 1680, Dec (2017). doi:10.1109/LED.2017.2768822
50. Transparent Thin-Film Transistors Based on Sputtered Electric Double Layer, Wensi Cai, Xiaochen Ma, Jiawei Zhang, and Aimin Song, Materials, 10, 429 (2017); doi:10.3390/ma10040429.
51. High Performance Complementary Circuits Based on p SnO and n IGZO Thin-Film Transistors, Jiawei Zhang, Jia Yang, Yunpeng Li, Joshua Wilson, Xiaochen Ma, Qian Xin, and Aimin Song, Materials, 10, 319 (2017); doi:10.3390/ma10030319.
52. A Novel Thermally Evaporated Etching Mask for Low-Damage Dry Etching, Wang H., Wang Y., Zhu G., Wang Q., Xin Q., Han L., Song A., IEEE Transactions on Nanotechnology,16(2), art. no.7839287, pp.290-295 (2017).
53. Effects of substrate and anode metal annealing on InGaZnO Schottky diodes, Lulu Du, He Li, Linlong Yan, Jiawei Zhang, Qian Xin, Qingpu Wang, and Aimin Song, Applied Physics Letters, 110, 011602 (2017) DOI: 10.1063/1.4973693
54. A Sputtered Silicon Oxide Electrolyte for High-Performance Thin-Film Transistors, Xiaochen Ma, Jiawei Zhang, Wensi Cai, Hanbin Wang, Joshua Wilson, Qingpu Wang, Qian Xin and Aimin Song, Scientific Reports, 7: 809 (2017) DOI:10.1038/s41598-017-00939-6.
55. Complementary Metal Oxide Semiconductor-Compatible, High-Mobility, <111>-Oriented GaSb Nanowires Enabled by Vapor–Solid–Solid Chemical Vapor Deposition, Zai-xing Yang, Lizhe Liu, SenPo Yip, Dapan Li, Lifan Shen, Ziyao Zhou, Ning Han, Tak Fu Hung, Edwin Yue-Bun Pun, Xinglong Wu, Aimin Song, and Johnny C. Ho, ACS Nano, 11, 4237?4246 (2017). DOI: 10.1021/acsnano.7b01217
56. Thermally evaporated SiO serving as gate dielectric in graphene field-effect transistors, Letao Yang, Hanbin Wang, Xijian Zhang, Yuxiang Li, Xiufang Chen, Xiangang Xu, Xian Zhao and Aimin Song, IEEE Transactions on Electron Devices, Volume: 64, Issue: 4, 1846 – 1850 April (2017) DOI: 10.1109/TED.2017.2665598
57. Extremely Sensitive Dependence of SnOx Film Properties on Sputtering Power, Yunpeng Li, Qian Xin, Lulu Du, Yunxiu Qu, He Li, Xi Kong, Qingpu Wang, and Aimin Song, Scientific Reports, 6:36183, (2016) DOI: 10.1038/srep36183
58. Influence of sputtering conditions on room-temperature fabricated InGaZnO-based Schottky diodes, Qian Xin; Linlong Yan; Lulu Du; jawei zhang; Yi Luo; Qingpu Wang; Aimin Song, Thin Solid Films, 616, 569–572 (2016). http://dx.doi.org/10.1016/j.tsf.2016.09.016
59. Simulation investigation of multiple domain observed in In0.23Ga0.77As planar Gunn diode, Li, B., Liu, H., Alimi, Y., Song, A., International Journal of Hydrogen Energy, 41 (35), pp. 15772-15776 (2016) DOI: 10.1016/j.ijhydene.2016.04.055
60. Performance enhancement of AlGaN/AlN/GaN high electron mobility transistors by thermally evaporated SiO passivation, Gengchang Zhu, Hanbin Wang, Yiming Wang, Xianjin Feng*, Aimin Song*, Applied Physics Letters, 109, 113503 (2016). DOI: 10.1063/1.4962894
61. High performance InGaZnO-based Schottky diodes fabricated at room temperature, Linlong Yan, Qian Xin, Lulu Du, Jiawei Zhang, Yi Luo, Qingpu Wang, and Aimin Song, Phys. Status Solidi C 13, No. 7–9, 618–622 (2016)  DOI: 10.1002/pssc.201510291
62. Enhanced photoelectrochemical performance of quantum dot-sensitized TiO2 nanotube arrays with Al2O3 overcoating by atomic layer deposition, M. Zeng, X. Peng, J. Liao, G. Wang, Y. Li, J. Li, Y. Qin, J. Wilson, A. Song & S. Lin, Physical Chemistry Chemical Physics. 18, 26, p. 17404-17413, 14 Jul 2016. DOI: 10.1039/C6CP01299J
63. Analysis of Carrier Transport and Band Tail States in p-type Tin Monoxide Thin-film Transistors by Temperature Dependent Characteristics, Jiawei Zhang, Xi Kong, Jia Yang, Yunpeng Li, Joshua Wilson, Jie Liu, Qian Xin, Qingpu Wang, A. M. Song, Applied Physics Letters, 108, 263503 (2016); doi: 10.1063/1.4955124
64. Graphene ballistic nano-rectifier with very high responsivity, Gregory Auton, Jiawei Zhang, Roshan Krishna Kumar, Hanbin Wang, Xijian Zhang, Ernie Hill and Aimin Song, Nature Communications, 7:11670 (2016) DOI: 10.1038/ncomms11670
65. High performance Schottky diodes based on indium-gallium-zinc-oxide, Jiawei Zhang, Qian Xin, and Aimin Song, Journal of Vacuum Science & Technology A 34, 04C101 (2016); doi: 10.1116/1.4945102
66. Room Temperature Processed Ultra High Frequency Indium Gallium Zinc Oxide Schottky Diode, Jiawei Zhang, Hanbin Wang, Joshua Wilson, Xiaochen Ma, Jidong Jin and Aimin Song, IEEE Electron Device Letters, 37, NO. 4, 389, APRIL (2016). DOI:  10.1109/LED.2016.2535904
67. Zero-Bias Microwave Detectors Based on Array of Nanorectifiers Coupled with a Dipole Antenna, Shahrir R. Kasjoo, Arun K. Singh, Siti S. Mat Isa, Muhammad M. Ramli, Muammar Mohamad Isa, Norhawati Ahmad, Nurul I. Mohd Nor, Nazuhusna Khalid and Ai Min Song, Solid-State Electronics, Volume 118, Pages 36–40 April (2016).  doi:10.1016/j.sse.2016.01.010
68. Effects of annealing conditions on resistive switching characteristics of SnOx thin films, Jidong Jin, Jiawei Zhang, Remzi E. Kemal, Yi Luo, Peng Bao, Mohammed Althobaiti, David Hesp, Vinod R. Dhanak, Zhaoliang Zheng, Ivona Z. Mitrovic, Steve Hall, Aimin Song, Journal of Alloys and Compounds, 673, 54-59 (2016). doi: 10.1016/j.jallcom.2016.02.215
69. 20 MHz polymer thin-film nanodiodes, Leszek Majewski, and Aimin Song, Physica Status Solidi B: Basic Solid State Physics, 253, No. 8, 1507 – 1510 (2016). http://dx.doi.org/10.1002/pssb.201600050
70. Improving photoelectrochemical performance of highly-ordered TiO2 nanotube arrays with cosensitization of PbS and CdS quantum dots, Zhang, X., Zeng, M., Zhang, J., Song, A. & Lin, S., 14 Jan 2016,  RSC Advances. 6, 10, p. 8118-8126 (2016). DOI: 10.1039/c5ra22964b
71. Graphene triangular ballistic rectifier: fabrication and characterization, Gregory Auton, Roshan Krishna Kumar, Ernie Hill and Aimin Song, Journal of Electronic Materials, Volume 46, Issue 7, pp 3942–3948 July 2017. DOI: 10.1007/s11664-016-4938-y
72. Ultrahigh responsivity of optically active, semiconducting asymmetric nano-channel diodes, Akbas, Y., Stern, A., Zhang, L. Q., Alimi, Y., Song, A. M., I?iguez-de-la-Torre, I., Mateos, J., González, T., Wicks, G. W. & Sobolewski, R., Journal of Physics. 647, p. 012013, Oct 2015,
73. Low-frequency noise properties in Pt-indium gallium zinc oxide Schottky diodes, Jiawei Zhang, Linqing Zhang, Xiaochen Ma, Joshua Wilson, Jidong Jin, Lulu Du, Qian Xin, and Aimin Song, Applied Physics Letters 107, 093505 (2015); doi: 10.1063/1.4930019
74. Flexible indium–gallium–zinc–oxide Schottky diode operating beyond 2.45 GHz, Jiawei Zhang, Yunpeng Li, Binglei Zhang, Hanbin Wang, Qian Xin & Aimin Song, Nature Communications 6, 7561 (2015) doi: 10.1038/ncomms8561
75. RF characterization of unipolar nanorectifiers at zero bias, Shahrir R. Kasjoo, Arun K. Singh, and Aimin M. Song,  Phys. Status Solidi A, 212, No. 9, 2091–2097 (2015) / DOI 10.1002/pssa.201532147
76. Study of Breakdown Voltage of Indium-Gallium-Zinc-Oxide-Based Schottky Diode. Qian Xin, Linlong Yan, Yi Luo, and Aimin Song. Applied Physics Letters. 2015 March; 106: 113506. DOI:10.1063/1.4916030
77. Graphene based ballistic rectifiers, Arun K. Singh, Gregory Auton, Ernie Hill, Aimin Song, Carbon Volume 84, April 2015, Pages 124–129.  doi: 10.1016/j.carbon.2014.11.064
78. Performance regeneration of InGaZnO transistors with ultra-thin channels. Binglei Zhang, He Li, Xijian Zhang, Yi Luo, Qingpu Wang, and Aimin Song. Applied Physics Letters. 2015; 106(9): 093506. DOI:10.1063/1.4914296